Term | Value | Language |
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dc.contributor.advisor | Boettcher, Shannon | |
dc.contributor.author | Cochran, Elizabeth | |
dc.date.accessioned | 2020-02-27T22:37:09Z | |
dc.date.available | 2020-02-27T22:37:09Z | |
dc.date.issued | 2020-02-27 | |
dc.identifier.uri | https://scholarsbank.uoregon.edu/xmlui/handle/1794/25274 | |
dc.description.abstract | Metal-oxide thin films serve many functions in electronic and energy devices. As technology progresses, demands for faster performance and improved connectivity within the internet of things (IoT) continually increase. The ability to deposit high-quality materials is required in order to meet such needs. Microelectronics industries have driven the development of methods to deposit dense, smooth, and defect-free metal-oxide thin films in order keep pace with transistor scaling predicted by Moore’s law. As a result, the chemical reactions involved in metal-oxide film formation from vapor-phase deposition methods, such as atomic layer deposition (ALD), are well characterized and controlled. However, the energy and infrastructure expense associated with vapor deposition is cost prohibitive for many applications. Solution processing offers a potentially low-cost, scalable method for metal-oxide thin film deposition to complement vapor-phase methods and expand the application base of these materials. Solution processing is amenable to many large-area deposition methods that use cheap infrastructure, making it a seemingly ideal candidate for roll-to-roll processing on plastic substrates. Achieving high-quality, high-performance metal-oxide thin films from solution precursors has been historically challenging; however, significant progress has been made to narrow the performance gap between vapor- and solution-deposited materials. This has been made possible by improved understanding and characterization of the thin-film chemical reaction pathway from solution precursor to metal-oxide thin film. This dissertation details important chemical considerations for preparing high-quality materials via solution deposition, with specific focus on metal-nitrate (M(NO3)x) precursors. Chapter I introduces the importance of understanding thin-film formation chemistry for the advancement of solution-deposition technologies. Chapters II and III review precursor chemistry and thin-film treatment methods that utilize unique decomposition chemistries of M(NO3)x to produce high-quality metal-oxide thin films. Chapters IV and V detail investigations of low-temperature film formation chemistry induced by combustion processing and water-vapor (or “steam”) annealing. Chapter VI frames the work of all previous chapters from the perspective of the role chemistry can play in process development of solution-processed metal-oxide thin films for the macroelectronics industry. This dissertation includes previously published and unpublished coauthored material. | en_US |
dc.language.iso | en_US | |
dc.publisher | University of Oregon | |
dc.rights | All Rights Reserved. | |
dc.title | Solution-Processed Metal-Oxide Thin Films: Toward Enhanced Understanding Film Formation Chemistry | |
dc.type | Electronic Thesis or Dissertation | |
thesis.degree.name | Ph.D. | |
thesis.degree.level | doctoral | |
thesis.degree.discipline | Department of Chemistry and Biochemistry | |
thesis.degree.grantor | University of Oregon |